Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Patent
1996-06-17
1999-07-06
Fahmy, Wael M.
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
257194, 257330, H01L 310328, H01L 310336, H01L 2976
Patent
active
059200880
ABSTRACT:
The present invention relates to Silicon Germanium-based Vertical MISFET devices allowing smaller device size and exhibiting significant advantages over prior devices related to the reduction of drain induced barrier lowering and parasitic capacitance and permitting a higher integration density.
REFERENCES:
patent: 4236166 (1980-11-01), Cho et al.
patent: 4550489 (1985-11-01), Chappell et al.
patent: 4740826 (1988-04-01), Chatterjee
patent: 4788158 (1988-11-01), Chatterjee
patent: 5398200 (1995-03-01), Mazure et al.
patent: 5414655 (1995-05-01), Ozaki et al.
patent: 5451800 (1995-09-01), Mohammad
patent: 5497017 (1996-03-01), Gonzales
patent: 5670803 (1997-09-01), Beilstein, Jr. et al.
"Fabrication of Three-Terminal Resonant Tunneling Devices in Silicon-Based Material," Zaslavsky, et al., Appl. Phys. Lett. 64 (13), pp. 1699-1701, Mar. 28, 1994.
"Ballistic Metal-Oxide-Semiconductor Field Effect Transistor," Natori, K., J. Appl. Phys. 76 (8), pp. 4879-4890, Oct. 15, 1994.
"The Physics and Device Applications of Epitaxially Grown Si and Si.sub.1-x Ge.sub.x Heterostructres," Kearney, M.J., GEC Journal of Research, vol. 10, No. 3, pp. 158-165, 1993.
Fahmy Wael M.
Interuniversitair Micro-Electronica Centrum (IMEC vzw)
LandOfFree
Vertical MISFET devices does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Vertical MISFET devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Vertical MISFET devices will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-901291