Vertical MIM capacitors and method of fabricating the same

Details Vertical MIM capacitors and method of fabricating the same Vertical MIM capacitors and method of fabricating the same

2005-10-31

2008-08-26

Baumeister, Bradley W. (Department: 2891)

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

C438S253000, C438S387000, C257S303000, C257S306000, C257S532000, C257SE21008

Reexamination Certificate

active

07416953

ABSTRACT:
A method of fabricating a vertical MIM capacitor. An insulation layer is formed on the substrate. The insulation layer is patterned to form an opening in a predetermined area of a core electrode. Then, the opening is filled to form a sacrificial plug. Subsequently, the insulation layer is patterned to form a trench in a predetermined area of an outer electrode around the sacrificial plug. A fenced insulation layer is formed around the sacrificial plug simultaneously. After the sacrificial plug is removed, a metal layer is filled in the predetermined area of the core and outer electrodes. A vertical MIM capacitor comprising the core electrode, the fenced insulation layer, and the outer electrode is finally formed. The invention also provides a vertical MIM capacitor.

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