Vertical MESFET with guardring

Details Vertical MESFET with guardring Vertical MESFET with guardring

1982-04-26

1984-07-10

Larkins, William D.

357 13, 357 15, 357 34, 357 56, H01L 2980

Patent

active

044596057

ABSTRACT:
A mesa type transistor structure is formed by using a metal mask in a semiconductor etching process whereby the mesa structure forms beneath the metal mask with the metal mask overhanging the sidewalls of the mesa. In a subsequent metal deposition step the overhanging metal layer provides a shadow mask which prevents the deposition of metal on a doped region in the mesa structure. A base contact in a bipolar structure or a gate contact in a field effect transistor structure abuts the mesa structure to provide enhanced device characteristics without shorting to the emitter or source region.

REFERENCES:
patent: 3244555 (1966-04-01), Adam et al.
patent: 3541403 (1970-11-01), Lepselter et al.
patent: 3764865 (1973-10-01), Napoli et al.
patent: 3780359 (1973-12-01), Dumke et al.
patent: 4326209 (1982-04-01), Nishizawa
patent: 4343015 (1982-08-01), Baliga et al.

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