Vertical LPCVD reactor

Details Vertical LPCVD reactor Vertical LPCVD reactor

1990-10-31

1991-12-31

Bueker, Richard

Coating apparatus

Gas or vapor deposition

With treating means

118725, C23C 1600

Patent

active

050762060

ABSTRACT:
A vertical low pressure chemical vapor deposition, LPCVD, reactor that may be used to form deposition films on semiconductor wafers is disclosed. The vertical LPCVD reactor has a reaction chamber with a top portion and a bottom portion. A furnace heats the reaction chamber. Deposition gases are introduced into the bottom portion of the reaction chamber by a gas tube having a substantial portion heated by the furnace. Deposition gases are introduced into the top portion of the reaction chamber by a gas tube that is shaped so that a substantial portion of it overlies the top portion of the reaction chamber and is heated by the furnace. By heating the substantial portion of the gas tube overlying the top portion of the reaction chamber, the deposition gases passing through this tube are heated before they enter the top portion of the reaction chamber. This improves the uniformity of deposited films on semiconductor wafers residing in the top portion of the reaction chamber.

REFERENCES:
patent: 4640223 (1987-02-01), Dozier
patent: 4957781 (1990-09-01), Kanegae
patent: 4989540 (1991-02-01), Fuse
patent: 4992301 (1991-02-01), Shishiguchi

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