Vertical light emitting diode device structure

Details Vertical light emitting diode device structure Vertical light emitting diode device structure

2006-05-09

2009-11-10

Nguyen, Cuong Q (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257S098000, C257S099000, C257S100000, C257S101000, C257S103000, C257SE29089, C257SE33001, C257SE33055, C257S094000

Reexamination Certificate

active

07615789

ABSTRACT:
A vertical light-emitting diode (VLED) structure that may impart increased luminous efficiency over conventional LEDs and VLEDs is described. As additional benefits, some embodiments may have less susceptibility to electrostatic discharge (ESD) and higher manufacturing yields than conventional devices. To accomplish these benefits, embodiment of the invention may utilize a spacer or other means to separate the p-doped layer from the active layer, thereby increasing the distance between the active layer and the reflective layer within the VLED structure.

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PCT International Search Report dated Apr. 23, 2008.

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