Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Having diverse electrical device
Reexamination Certificate
2008-03-28
2010-12-07
Thai, Luan C (Department: 2891)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Having diverse electrical device
C438S022000, C438S029000
Reexamination Certificate
active
07846753
ABSTRACT:
A vertical gallium-nitrate-based LED and method of making a vertical gallium-nitrate-based LED using a stop layer is provided. Embodiments of the present invention use mechanical thinning and a plurality of superhard stop points to remove epitaxial layers with a high level of certainty. According one embodiment, the method of making a vertical LED includes forming a plurality of layers on a sapphire substrate, forming a plurality of stop points in the plurality of layers, removing the sapphire substrate and part of a u-GaN layer using mechanical thinning, wherein the mechanical thinning stops at an end of the plurality of stop points, selectively etching the u-GaN layer and exposing at least a part of the highly doped stop layer, and forming an n-electrode on the highly doped stop layer.
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International Search Report, Sep. 25, 2008.
Cai Yong
Chu Hung Shen
Farnsworth Todd R.
Hong Kong Applied Science and Technology Research Institute
Kaminski Jeffri A.
Thai Luan C
Venable LLP
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