Vertical junction field effect transistors having sloped...

Details Vertical junction field effect transistors having sloped... Vertical junction field effect transistors having sloped...

2009-11-05

2011-11-15

Nguyen, Dao H (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

C257S134000, C257S136000, C257S256000, C257S272000, C257S286000, C257S287000, C257S328000, C257S330000, C257SE27148, C257SE29313, C257SE29314, C257SE31073, C438S137000, C438S138000, C438S156000, C438S192000, C438S212000, C438S268000

Reexamination Certificate

active

08058655

ABSTRACT:
Semiconductor devices and methods of making the devices are described. The devices can be junction field-effect transistors (JFETs). The devices have raised regions with sloped sidewalls which taper inward. The sidewalls can form an angle of 5° or more from vertical to the substrate surface. The devices can have dual-sloped sidewalls in which a lower portion of the sidewalls forms an angle of 5° or more from vertical and an upper portion of the sidewalls forms an angle of <5° from vertical. The devices can be made using normal (i.e., 0°) or near normal incident ion implantation. The devices have relatively uniform sidewall doping and can be made without angled implantation.

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