Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Patent
1993-07-02
1994-11-22
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
257616, 257263, H01L 29161, H01L 29205, H01L 29225
Patent
active
053671848
ABSTRACT:
The vertical junction field-effect transistor comprises a semiconductor structure including an internal semiconductor layer (23, 26) extending within the channel region (7) between the gate region (4, 31), this internal layer being produced in a semiconductor material, having an energy gap (Eg.sup.2) smaller than that of the material forming the channel and gate regions, and the same type of conductivity (N) as that of the channel region, and the heterojunction formed between this internal layer and the channel region exhibits a band discontinuity situated in the valence band in the case of a N-type channel, or in the conduction band in the case of a P-type channel.
REFERENCES:
patent: 4460910 (1984-07-01), Chappell et al.
patent: 4743951 (1988-05-01), Chang et al.
patent: 4799090 (1989-01-01), Nishizawa
patent: 4916499 (1990-04-01), Kawai
French Search Report for Application No. FR 9208179.
Kuriyama, Y. et al., "15 GBPS MUX/DMUX Implemented with AIGaAs/GaAs HBTS," IEEE GaAs Sumposium, Oct. 25, 1989, pp. 313-316.
Crane Sara W.
France Telecom
Monin, Jr. Donald L.
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