Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Reexamination Certificate
2007-05-22
2007-05-22
Tran, Long K. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
C257S077000, C257S256000, C257S504000, C257SE27148
Reexamination Certificate
active
10698170
ABSTRACT:
Silicon carbide metal-oxide semiconductor field effect transistors (MOSFETs) may include an n-type silicon carbide drift layer, a first p-type silicon carbide region adjacent the drift layer and having a first n-type silicon carbide region therein, an oxide layer on the drift layer, and an n-type silicon carbide limiting region disposed between the drift layer and a portion of the first p-type region. The limiting region may have a carrier concentration that is greater than the carrier concentration of the drift layer. Methods of fabricating silicon carbide MOSFET devices are also provided.
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Cree Inc.
Myers Bigel & Sibley Sajovec, PA
Tran Long K.
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