Vertical JFET field effect transistor

Details Vertical JFET field effect transistor Vertical JFET field effect transistor

1993-04-30

1999-03-30

Guay, John

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257266, 257287, 257279, 257263, H01L 29808

Patent

active

058892982

ABSTRACT:
A vertical field effect transistor (700) and fabrication method with buried gates (704) having gate sidewall crystal orientation the same as the substrate surface and a low index substrate crystal orientation without tilt to a higher index direction. The gate (704) may have modulated doping along the channel (706), and the drain (708) may have a lighter doping level than the channel which may be accomplished by an epitaxial overgrowth of the gates (704) to form the channels (706).

REFERENCES:
patent: 4470059 (1984-09-01), Nishizawa et al.
patent: 4498093 (1985-02-01), Allyn et al.
patent: 4528745 (1985-07-01), Muraoka et al.
patent: 4654679 (1987-03-01), Muraoka
patent: 4712122 (1987-12-01), Nishizawa et al.
patent: 5168070 (1992-12-01), Luth

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