Vertical isolated-collector PNP transistor structure

Details Vertical isolated-collector PNP transistor structure Vertical isolated-collector PNP transistor structure

1991-04-04

1992-10-13

Hille, Rolf

357 48, 357 34, 357 44, 357 86, 357 46, H01L 2702

Patent

active

051555727

ABSTRACT:
A vertical isolated-collector PNP transistor structure (58) comprises a P+ region (45), a N region (44) and a P- well region (46) which form the emitter, the base and the collector, respectively. The P- well region is enclosed in a N type pocket comprised of a N+ buried layer (48) and a N reach-through region (47) in contact therewith. The contact regions (46-1, 47-1) to the P- well region (46) and to the N reach-through region (47) are shorted to define a common collector contact (59). In addition, the thickness W of the P- well region (46) is so minimized to allow transistor action of the parasitic NPN transistor formed by N PNP base region (44), P- well region (46) and the N+ buried layer, (48) respectively as the collector, the base and the emitter of said PNP transistor. The PNP transistor structure (67) may be combined with a conventional NPN transistor structure (61).

REFERENCES:
patent: 4564855 (1986-01-01), Van Zanten
patent: 4887141 (1985-12-01), Bertotti et al.
patent: 4979008 (1990-12-01), Siligoni et al.
Solid State Technology, vol. 16, No. 4, Apr. 1973, Washington U.S., pp. 53-68; S. C. Su et al.; "A New Complementary Bipolar Transistor Structure".

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