Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor
Reexamination Certificate
2006-12-05
2006-12-05
Quach, T. N. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
C257S623000
Reexamination Certificate
active
07145219
ABSTRACT:
A method for fabricating a vertical integrated circuit is disclosed. Integrated circuits are fabricated on a substrate with layers of predetermined weak and strong bond regions where deconstructed layers of integrated circuits are fabricated at or on the weak bond regions. The layers are then peeled and subsequently bonded to produce a vertical integrated circuit. An arbitrary number of layers can be bonded and stacked in to a separate vertical integrated circuit. Also disclosed are methods of creating edge interconnects and vias through the substrate to form interconnections between layers and devices thereon.
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Shah, Divyang M.,
Quach T. N.
Reveo Inc.
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