Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field
Reexamination Certificate
2007-04-17
2007-04-17
Baumeister, B. William (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Magnetic field
C257S426000, C257S427000, C257SE29323, C438S048000, C324S207200
Reexamination Certificate
active
11038881
ABSTRACT:
A vertical Hall effect apparatus, including methods thereof. A substrate layer can be provided upon which an epitaxial layer is formed. The epitaxial layer is surrounded vertically by one or more isolation layers. Additionally, an oxide layer can be formed above the epitaxial layer. A plurality of Hall effect elements can be formed within the epitaxial layer(s) and below the oxide layer, wherein the Hall effect elements sense the components of an arbitrary magnetic field in the plane of the wafer and perpendicular to the current flow in the hall element. A plurality of field plates can be formed above the oxide layer to control the inherited offset due to geometry control and processing of the vertical Hall effect apparatus, while preventing the formation of an output voltage of the vertical Hall effect apparatus at zero magnetic fields thereof.
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Alimi Yousef M.
Biard James R.
Morales Gilberto
Baumeister B. William
Fulk Steven J.
Honeywell International , Inc.
Lambrinos Matthew F.
Lopez Kermit D.
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