Vertical gradient freezing apparatus for compound semiconductor

Chemical apparatus and process disinfecting – deodorizing – preser – Chemical reactor – Including specific material of construction

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1566161, 1566162, 1566163, 1566164, 15661641, 156DIG70, 1641222, 373137, 373139, 422245, B01D 900

Patent

active

051357267

ABSTRACT:
A vertical gradient freeze single crystal growing apparatus utilizing a direct monitoring furnace which is possible to obtain rapid high temperature heating and uniform temperature distribution by using direct monitoring furnace as a higher temperature part furnace provided with double quartz tube applied with gold thin film, and also capable of observing entire process of single crystal growing directly by naked eye.
The apparatus includes a direct monitoring furnace corresponding to higher temperature part furnace and lower temperature part furnace mounted on vertically standing guide rails so as to be moved upwardly and downwardly voluntarily thereon simultaneously or independently, and the direct monitoring furnace is provided with heater wires divided into more than two regions to inner side of protecting quartz tube provided within double quartz tube applied with gold thin film on its interior surface and formed with cooling water in and outlets and also crystal growing reaction tube capable of normal and reverse turning is provided thereto, and a number of thermocouples are provided to the furnaces.

REFERENCES:
patent: 4242175 (1980-12-01), Zumbrunnen
patent: 4863553 (1989-09-01), Lehoczky et al.
patent: 4904336 (1990-02-01), Ozawa et al.
patent: 4957711 (1990-09-01), Min et al.
"Low Cost Conversion of Polycrystalline Silicon Into Sheet by Hem and Fast;" Khatlak et al; Conference: 14th IEEE Photovoltaic Specialists Conf. 1980; San Diego CA USA (Jan. 7-10, 1980), pp. 484-488.
"Infrared Heating for People and Products", GE Lamp Division, 1974, pp. 1-23.

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