Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state
Patent
1996-08-29
1998-06-23
Garrett, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
For crystallization from liquid or supercritical state
117200, 117204, 117205, C30B 3500
Patent
active
057699445
ABSTRACT:
An improved vertical gradient freeze and vertical Bridgman compound semiconductor crystal growth apparatus capable of applying an axial magnetic field of about 1600G in the crystal growth axis direction using an electrical resistance type electromagnet which has a simple structure and can be installed easily, which includes a high temperature electric furnace arranged at an upper portion of the apparatus, a crystal growth reaction tube disposed within a low temperature electric furnace arranged below the high temperature electric furnace and having a reaction container disposed therein, and an electromagnet surrounding the intermediate portion of the high temperature electric furnace.
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Kazutaka Terashima et al., "Vertical Field Applied LEC Apparatus for Larger Diameter GaAS Single Crystal Growth," Japanese Journal of Applied Physics vol. 23, No. 5, May 5, 1984, pp. L302-L304.
Keigo Hoshikawa, "Czochralski Silicon Crystal Growth in the Vertical Magnetic Field," Japanese Journal of Applied Physics Sep. 1982, vol. 21, No. 9, pp. L545-L574.
Min Suk-ki
Park Young Ju
Garrett Felisa
Korea Institute of Science and Technology
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