Vertical-gate CMOS compatible lateral bipolar transistor

Details Vertical-gate CMOS compatible lateral bipolar transistor Vertical-gate CMOS compatible lateral bipolar transistor

1994-06-24

1995-08-29

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Lateral bipolar transistor structure

257514, 257556, 257586, H01L 2970

Patent

active

054463122

ABSTRACT:
A transistor with silicon on insulator (SOI) intrinsic base and a collector each formed by a low temperature epitaxial process and each orientated vertically with respect to the (SOI) substrate. The base width can be as narrow as in a conventional vertical transistor. Similarly, the collector width can be precisely controlled.

REFERENCES:
patent: 5047823 (1991-09-01), Treitinger et al.
patent: 5101256 (1992-03-01), Harame et al.

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