Vertical GaN-based LED and method of manufacturing the same

Details Vertical GaN-based LED and method of manufacturing the same Vertical GaN-based LED and method of manufacturing the same

2007-08-21

2007-08-21

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

C257S103000, C257S079000, C257S085000, C257S200000, C257S201000, C257S189000, C438S022000, C438S046000, C438S047000

Reexamination Certificate

active

11490231

ABSTRACT:
Provided are a vertical GaN-based LED and a method of manufacturing the same. The vertical GaN-based LED includes an n-electrode. An AlGaN layer is formed under the n-electrode. An undoped GaN layer is formed under the AlGaN layer to provide a two-dimensional electron gas layer to a junction interface of the AlGaN layer. A GaN-based LED structure includes an n-type GaN layer, an active layer, and a p-type GaN layer that are sequentially formed under the undoped GaN layer. A p-electrode is formed under the GaN-based LED structure. A conductive substrate is formed under the p-electrode.

REFERENCES:
patent: 6455877 (2002-09-01), Ogawa et al.
patent: 2003/0214807 (2003-11-01), Liu
patent: 2005-183930 (2005-07-01), None
patent: WO99/46822 (1999-09-01), None

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