Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Reexamination Certificate
2011-01-18
2011-01-18
Smith, Zandra (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
C257S192000, C257S280000, C257S329000, C257S609000, C257S615000, C257SE29093, C257SE29262, C257SE29318
Reexamination Certificate
active
07872285
ABSTRACT:
Affords epitaxial substrates for vertical gallium nitride semiconductor devices that have a structure in which a gallium nitride film of n-type having a desired low carrier concentration can be provided on a gallium nitride substrate of n type. A gallium nitride epitaxial film (65) is provided on a gallium nitride substrate (63). A layer region (67) is provided in the gallium nitride substrate (63) and the gallium nitride epitaxial film (65). An interface between the gallium nitride substrate (43) and the gallium nitride epitaxial film (65) is positioned in the layer region (67). In the layer region (67), a peak value of donor impurity along an axis from the gallium nitride substrate (63) to the gallium nitride epitaxial film (65) is 1×1018cm−3or more. The donor impurity is at least either silicon or germanium.
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Hashimoto Shin
Kiyama Makoto
Miura Kouhei
Sakurada Takashi
Tanabe Tatsuya
Joy Jeremy J
Judge James W.
Smith Zandra
Sumitomo Electric Industries Ltd.
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