Vertical gallium-nitride based light emitting diode

Details Vertical gallium-nitride based light emitting diode Vertical gallium-nitride based light emitting diode

2006-10-16

2008-05-13

Sefer, A. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With reflector, opaque mask, or optical element integral...

C257S076000, C257S094000, C257S103000, C257S184000, C257SE33006, C257SE33068

Reexamination Certificate

active

07372078

ABSTRACT:
A vertical GaN-based LED includes: an n-electrode; a light-emitting structure in which an n-type GaN layer, an active layer, and a p-type GaN layer are sequentially formed under the n-electrode; a p-electrode formed under the light-emitting structure; a passivation layer formed to cover the side and bottom surfaces of the light-emitting structure and expose a predetermined portion of the p-electrode, the passivation layer being formed of a distributed Bragg reflector (DBR); a plating seed layer formed under the passivation layer and the p-electrode; and a support layer formed under the plating seed layer.

REFERENCES:
patent: 2006/0154389 (2006-07-01), Doan
patent: 2007/0295952 (2007-12-01), Jang et al.
patent: 2000-0008284 (2000-02-01), None
patent: 10-0613272 (2006-08-01), None

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