Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1994-02-14
1995-07-25
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257577, 257751, 257768, 257539, H01L 2948, H01L 2972
Patent
active
054364965
ABSTRACT:
A vertical fuse structure including a lightly-doped shallow emitter 30 provides improved fusing characteristics. The structure includes a buried collector 14, an overlying base 30, and an emitter 44 above the base 30. In one preferred embodiment, the emitter 44 extends about 0.2 microns from the upper surface and has a dopant concentration of about 8.times.1019 atoms of arsenic per cubic centimeter at the surface. A lightly doped base region 30 extends for about 0.46 microns below the emitter 44 to the collector 14. The upper surface of emitter 44 includes a metal contact 60. Heating the metal 60/emitter 44 interface to its eutectic melting point using a current or voltage pulse causes the aluminum to short through the emitter 44 to the base 30. Shorting the emitter programs the fuse. A second preferred embodiment uses polysilicon as an interconnecting medium. Mass transport of aluminum atoms through the polysilicon allows aluminum to collect at an interface between the polysilicon and an underlying single crystal silicon layer. Aluminum atoms are supplied from a contact metal. A barrier metal between the contact metal and an underlying polysilicon contact to the emitter is not present. Inhibiting or replacing a TiSi.sub.2 layer over the fuse emitter contact provides better reproducible fusing action. PtSi replaces TiSi.sub.2 if formed over the fuse emitter contact. Separate fuse base implants for the vertical fuse change BJT parameters for improved fusing characteristics. In still another preferred embodiment, codiffusing N type and P type dopants from the polysilicon emitter contact drops a separate fuse mask. The P type codiffused dopants diffuse ahead of the N type emitter dopants into the single crystal to change the base parameters to provide a decreased gain.
REFERENCES:
patent: 3191151 (1965-06-01), Price
patent: 4080616 (1978-03-01), Horie
patent: 4491860 (1985-01-01), Lim
patent: 4584594 (1986-04-01), Vora et al.
patent: 4624046 (1986-11-01), Shideler et al.
patent: 4649409 (1987-03-01), Roppongi et al.
patent: 4651409 (1987-03-01), Ellsworth et al.
patent: 4700465 (1987-10-01), Sirkin
patent: 4707723 (1987-11-01), Okamoto et al.
patent: 4714951 (1987-12-01), Baudrant et al.
patent: 4727409 (1988-02-01), Conner et al.
patent: 4804636 (1989-02-01), Groover, III et al.
patent: 4933736 (1990-06-01), Conner et al.
patent: 5086005 (1992-02-01), Hirakawa
patent: 5144403 (1992-09-01), Chiang et al.
patent: 5144404 (1992-09-01), Iranmanesh et al.
Electronic Design, pp. 35-36, by Burshy, Oct. 1982.
Intersil Inc., pp. 202-206, by Brockhoff.
Electronics, pp. 52-55, by Peltzer et al., Mar. 1971.
Lloyd, "Semiconductor Process to Prevent Aluminum Alloying," IBM Technical Disclosure Bulletin, vol. 10, No. 11, Apr. 1968.
Bouknight James L.
Ganschow George E.
Iranmanesh Ali
Jerome Rick C.
Kovacs Ronald P.
National Semiconductor Corporation
Prenty Mark V.
LandOfFree
Vertical fuse device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Vertical fuse device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Vertical fuse device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-741582