Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – With means for treating single-crystal
Patent
1996-06-04
1997-12-16
Garrett, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
With means for treating single-crystal
117200, C30B 3500
Patent
active
056980299
ABSTRACT:
A high-pressure container 1 as a furnace casing is equipped with insulating cylinder 2 of an inverted glass shape, and heater elements 18 individually mounted on heater mounting plates 16 arranged in parallel to section vertically the space for arranging the heater elements 18 at a given interval in the insulating cylinder 2.
For the procedures of single crystal growth by heating in a high-pressure gas atmosphere, the insulating cylinder 2 and the heater mounting plates 16 can suppress the effects of spontaneous convection of a high-pressure gas and the effects of the radiation heat from an adjacent heater element, as less as possible, so that the temperature controllability of each heating zone can be improved whereby the vertical temperature distribution in the furnace can be controlled appropriately. Also, a heater element 18 of a larger aperture size can be maintained at a stably supported state, whereby a single crystal of a larger dimension can be grown.
REFERENCES:
patent: 5603763 (1997-02-01), Taniguchi et al.
Fujikawa Takao
Kawanaka Takao
Okada Hiroshi
Sakashita Yoshihiko
Uehara Katsuhiro
Garrett Felisa
Kabushiki Kaisha Kobe Sekio Sho
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