Vertical field effect transistor with improved gate and channel

Details Vertical field effect transistor with improved gate and channel Vertical field effect transistor with improved gate and channel

1979-07-27

1981-04-14

Wojciechowicz, Edward J.

357 22, H01L 2906

Patent

active

042622964

ABSTRACT:
A high frequency field effect transistor of gallium arsenide or other III-V semiconductor compounds has a preferentially etched trapezoidal groove structure in the top surface which creates parallel trapezoidal semiconductor fingers that are wider at the top than at the bottom. Schottky gates or junction gates are fabricated within the grooves surrounding the elongated fingers. The vertical conducting channels between the gates are narrow leading to a high blocking gain, and more contact area is available at the top of the device.

REFERENCES:
patent: 3761785 (1973-09-01), Pruniaux
patent: 3851379 (1974-12-01), Gutknecht et al.
patent: 4070690 (1978-01-01), Wickstrom
patent: 4129879 (1978-12-01), Tantraporn
patent: 4171234 (1979-10-01), Nagata et al.
J. Electrochem. Soc.-vol. 118, No. 1, Jan. 1971, pp. 118-122, Tarui et al.
J. Electrochem. Soc.-vol. 118, No. 5, May 1971, pp. 768-771, Iida et al.
G.E. R&D Dist.-Rpt. No. 74CRD039-Feb. 1974, Tantraporn et al.
J. Electrochem Soc.-vol. 122, No. 12, Dec. 1975, pp. 1666-1671, Smeltzer.

Affiliated with

Also associated with

Rating

Vertical field effect transistor with improved gate and channel does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Vertical field effect transistor with improved gate and channel , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Vertical field effect transistor with improved gate and channel will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-161241