Vertical field-effect transistor, method of manufacturing...

Details Vertical field-effect transistor, method of manufacturing... Vertical field-effect transistor, method of manufacturing...

2007-10-23

2007-10-23

Trinh, Michael (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Organic semiconductor material

C257S059000, C257S072000, C257S079000

Reexamination Certificate

active

11073867

ABSTRACT:
Provided are a vertical field-effect transistor, a method of manufacturing the same, and a display device having the same. The method is highly reproducible and can be used to manufacture a vertical organic field-effect transistor at a low cost. In addition, the method does not require photolithography and a shadow mask. In the vertical field-effect transistor, a source electrode is formed on a substrate, and an insulating layer and discontinuous gate electrodes are formed. Then, a charge carrier block layer, an organic semiconductor material, and a drain electrode are formed. The gate electrodes are formed using nanoparticles.

REFERENCES:
patent: 5676853 (1997-10-01), Alwan
patent: 6166397 (2000-12-01), Yamazaki et al.
patent: 6614069 (2003-09-01), Rosner et al.
patent: 2001/0014426 (2001-08-01), Michiels et al.
patent: 2002/0121662 (2002-09-01), Rosner et al.
patent: 2003/0015698 (2003-01-01), Baldo et al.
patent: 2005/0173701 (2005-08-01), Kawase et al.
patent: 1 265 103 (2002-12-01), None
patent: 1 281 666 (2003-02-01), None
patent: WO 02/29912 (2002-04-01), None
European Search Report dated Aug. 12, 2004 , 11 pages, EP 04 09 0102.
Search Report dated Jan. 24, 2002 , 3 pages, PCT/GB 01/04421.
Encapsulated Inorganic Resist Technology Applied to 157 NM-Lithography; Theodore H. Fedynyshyn et al.; Proceedings of SPIE, vol. 4345; 2001; pp. 308-318.

Affiliated with

Also associated with

Rating

Vertical field-effect transistor, method of manufacturing... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Vertical field-effect transistor, method of manufacturing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Vertical field-effect transistor, method of manufacturing... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3877272