Vertical field effect transistor and diode

Details Vertical field effect transistor and diode Vertical field effect transistor and diode

1993-11-29

2000-08-01

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257272, 257267, 257471, 257472, 257474, 257476, H01L 2980, H01L 27095

Patent

active

060970464

ABSTRACT:
A vertical field effect transistor (1400) and diode (1450) formed on a single III-V substrate. The diode cathode and the transistor drain or collector may be formed in a common layer (1408).

REFERENCES:
patent: 4183036 (1980-01-01), Muller
patent: 4288800 (1981-09-01), Yoshida et al.
patent: 4896196 (1990-01-01), Blanchard et al.
patent: 5111253 (1992-05-01), Korman et al.
patent: 5122853 (1992-06-01), Luth

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