Vertical field effect transistor

Details Vertical field effect transistor Vertical field effect transistor

1979-07-05

1980-11-25

Wojciechowicz, Edward J.

357 23, 357 15, 357 16, 357 56, 357 61, 357 55, 357 60, H01L 2980

Patent

active

042361664

ABSTRACT:
A vertical field effect transistor (10) includes a relatively wide bandgap, lowly doped active layer (18) epitaxially grown on, and substantially lattice matched to, an underlying semiconductor body portion (13). A mesa (20) of lower bandgap material is epitaxially grown on and substantially lattice matched to the active layer. A source electrode (22) is formed on a bottom major surface (34) of the semiconductor body portion, a drain electrode (24) is formed on the top of the mesa, and a pair of gate electrode stripes (26) are formed on the active layer adjacent both sides of the mesa. When voltage (V.sub.G), negative with respect to the drain, is applied to the gate electrodes, the depletion regions (28) thereunder extend laterally in the active layer until they intersect, thereby pinching off the flow of current in the channel extending from the drain and source electrodes. Also described is an embodiment in which spaced-apart, high impedance zones (30) underlie the active layer and the mesas, and the spaces between zones underlie the gate stripes.

REFERENCES:
patent: 3412297 (1968-11-01), Amlinger
patent: 3823352 (1974-07-01), Pruniaux et al.
patent: 3906541 (1975-09-01), Goronkin
patent: 4075652 (1978-02-01), Umebachi et al.
patent: 4157556 (1979-06-01), Decker et al.
IEEE Trans. on Elec. Dev.-vol. ED-21, No. 1, Jan. 1974, pp. 113-118 Lecrosnier et al.
IEEE Inter. Solid-State Cir. Conf.-Feb. 12, 1975, pp. 66-67 Vergnolle et al.
IEEE Trans. Elec. Dev.-Aug. l975, pp. 613-614 Umebachi et al.
IEEE Trans. Microwave The. & Techs.-vol. MTT.-24, No. 6-Jun. 1976 pp. 305-311-Oakes et al.

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