Vertical elevated pore phase change memory

Details Vertical elevated pore phase change memory Vertical elevated pore phase change memory

2008-04-29

2008-04-29

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S102000, C257SE21068, C257SE21069

Reexamination Certificate

active

11270909

ABSTRACT:
A vertical elevated pore structure for a phase change memory may include a pore with a lower electrode beneath the pore contacting the phase change material in the pore. The lower electrode may be made up of a higher resistivity lower electrode and a lower resistivity lower electrode underneath the higher resistivity lower electrode. As a result, more uniform heating of the phase change material may be achieved in some embodiments and better contact may be made in some cases.

REFERENCES:
patent: 5534711 (1996-07-01), Ovshinsky et al.
patent: 5789758 (1998-08-01), Reinberg
patent: 5920788 (1999-07-01), Reinberg
patent: 6507061 (2003-01-01), Hudgens et al.
patent: 6545287 (2003-04-01), Chiang
patent: 6566700 (2003-05-01), Xu
patent: 6586761 (2003-07-01), Lowrey
patent: 6791102 (2004-09-01), Johnson et al.

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