Vertical diamond field effect transistor

Details Vertical diamond field effect transistor Vertical diamond field effect transistor

1992-06-09

1994-03-15

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

257263, 257266, 257368, 257613, H01L 310312, H01L 2980, H01L 2976, H01L 2912

Patent

active

052948145

ABSTRACT:
A vertical diamond field effect transistor includes a nondiamond substrate, preferably a heavily doped silicon substrate, having a diamond layer on one face thereof, a source contact on the diamond layer, a gate contact on the diamond layer adjacent the source contact, and a drain contact on the back face of the substrate. The diamond layer is preferably a single layer of large polycrystalline diamond grains, having a heavily doped region adjacent the silicon substrate. The gate and source contacts may extend across many polycrystalline diamond grains in the single layer of polycrystalline diamond grains. Alternatively, the source and gate contacts may be narrower than the average grain size of the polycrystalline diamond grains. Interdigitated source and gate fingers, narrower than the average polycrystalline diamond grain size, may also be provided. The single layer of polycrystalline grains may be formed on the silicon substrate. High performance vertical diamond field effect transistor devices are thereby provided.

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