1987-07-27
1988-05-24
Laroche, Eugene R.
357 234, 357 22, H01L 2978, H01L 2980
Patent
active
047469609
ABSTRACT:
A vertical j-MOSFET useful as a power transistor includes a two-dimensional array of square cells in which a small fraction of the cells are replaced by a double-junction sink useful for collecting the minority carriers in the channel regions that normally will accumulate at each interface of the gate electrode and channel region.
REFERENCES:
patent: 4181542 (1980-01-01), Yoshida et al.
patent: 4611220 (1986-09-01), MacIver
Jain Kailash C.
MacIver Bernard A.
Valeri Stephen J.
General Motors Corporation
LaRoche Eugene R.
Shingleton Michael B.
Wallace Robert J.
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