Vertical current flow semiconductor device utilizing wafer bondi

Details Vertical current flow semiconductor device utilizing wafer bondi Vertical current flow semiconductor device utilizing wafer bondi

1992-10-26

1994-06-21

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257139, 257 44, 257654, 257751, H01L 2348, H01L 2352, H01L 2940, H01L 2974

Patent

active

053230590

ABSTRACT:
Briefly stated, the present invention provides a vertical current flow semiconductor device (17). The vertical current flow semiconductor device (17) includes a semiconductor substrate (12) having an intermediate conductor layer (16) on a surface of the substrate (12). An active layer (11) that is used for forming active elements (20, 21, 22, 23) of the vertical current flow semiconductor device (17) is on the intermediate conductor layer (16). The intermediate conductor layer (16) forms an ohmic contact with the active layer (11).

REFERENCES:
patent: 3908187 (1975-09-01), Sheldon et al.
patent: 5170242 (1992-12-01), Stevens et al.

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