Vertical component with high-voltage strength

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Bidirectional rectifier with control electrode

Reexamination Certificate

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Details

C257S129000, C257S119000, C257S168000, C257S169000, C257S170000, C257S171000

Reexamination Certificate

active

06967356

ABSTRACT:
The invention concerns a vertical component with a four-layered structure comprising a thick lightly-doped zone (1) of a first type of conductivity providing the component voltage strength, enclosed with a peripheral wall (2) of a second type of conductivity extending vertically from one surface to the other of the component, and highly doped layer (3) of the second type of conductivity extending over the entire rear surface of the component. A lightly-doped layer (21) of the second type of conductivity extends over the entire surface of the component at the interface between the lightly-doped thick zone of the first type of conductivity and the highly-doped layer of the second type of conductivity.

REFERENCES:
patent: 3362858 (1968-01-01), Knopp
patent: 4402001 (1983-08-01), Momma et al.
patent: 4942446 (1990-07-01), Yakushiji
patent: 6078065 (2000-06-01), Streit et al.
patent: 6583496 (2003-06-01), Galtie et al.
patent: 6593600 (2003-07-01), Duclos et al.
patent: 0 109 331 (1984-05-01), None
International Search Report from application No. PCT/FR 01/03150.
English translation of the International Preliminary Examination Report from priority application No. PCT/FR01/031508.

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