Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2005-07-05
2005-07-05
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S461000, C257S431000, C257S463000, C438S048000
Reexamination Certificate
active
06914314
ABSTRACT:
A vertical color filter sensor group formed on a substrate (preferably a semiconductor substrate) and including at least two vertically stacked, photosensitive sensors, each having a different spectral response. At least one of the sensors includes at least one layer of a semiconductor material other than crystalline silicon (for example, silicon carbide, or InxGa1-xN, or another III-V semiconductor material, or polysilicon, or amorphous silicon). Other aspects of the invention are arrays of such vertical color filter sensor groups, and methods for fabricating such vertical color filter sensor groups and arrays thereof.
REFERENCES:
patent: 3617753 (1971-11-01), Kato et al.
patent: 4213138 (1980-07-01), Campbell et al.
patent: 4238760 (1980-12-01), Carr
patent: 4581625 (1986-04-01), Gay et al.
patent: 4677289 (1987-06-01), Nozaki et al.
patent: 4758734 (1988-07-01), Uchida et al.
patent: 4984032 (1991-01-01), Miura et al.
patent: 5138416 (1992-08-01), Brillson
patent: 5883421 (1999-03-01), Ben Chouikha et al.
patent: 5889315 (1999-03-01), Farrenkopf et al.
patent: 5899714 (1999-05-01), Farrenkopf et al.
patent: 5965875 (1999-10-01), Merrill
patent: 6111300 (2000-08-01), Cao et al.
patent: 6455833 (2002-09-01), Berezin
patent: 6593558 (2003-07-01), Edgar
patent: 6724018 (2004-04-01), Ando et al.
patent: 2002/0058353 (2002-05-01), Merrill
patent: 2002/0130957 (2002-09-01), Gallagher et al.
patent: 61-187282 (1986-08-01), None
patent: 1-34966 (1989-05-01), None
patent: 05343656 (1993-12-01), None
K.M. Findlater, et al., “A CMOS Image Sensor Employing a Double Junction Photodiode”,2001 IEEE Workshop on Charge-Coupled Devices and Advanced Image Sensors, IEEE Electron Devices Society(2001), pp. 60-63.
I. Takayanagi, et al., “A Low Dark Current Stacked CMOS-APS for Charged Particle Imaging”,IEDM Technical Digest, Washington, D.C., Dec. 2-5, 2001, pp. 551-554.
M. Bartek, et al., “An Integrated Silicon Colour Sensor Using Selective Epitaxial Growth”,Sensors and Actuators A: Physical, 41-42 (1994), pp. 123-128.
P. Catrysse et al., “An Integrated Color Pixel in 0.18 μm CMOS Technology”,2001 IEDM Technical Digest, pp. 24.4.1-24.4.4.
D. Knipp, et al., “Low Cost Approach to Realize Novel Detectors for Color Recognition”,International Congress on Imaging Science,Sep. 7-11, 1998. Antwerp, Belgium, pp. 350-353.
D. Pasquariello, et al., “Plasma-Assisted INP-to-Si Low Temperature Wafer Bonding”,IEEE Journal on Selected Topics in Quantum Electronics, vol. 8, No. 1. Jan./Feb. 2002, pp. 118-131.
Sony, Inc., “Third Generation Diagonal 4.5 mm(Type ¼)250K/380K-pixel Color CCD Image Sensor, 250K/290K Pixels, ICX226AK(NTSC),ICX227AK(PAL),380K/440K Pixels, ICX228AK(NTSC),ICX220AK(PAL)”, 2 pages, downloaded from the Internet on Nov. 18, 2002 from http://www.sony.net/products/sc-hp/cxpal/cxnews-20/pdf
.1cx226.pdf.
Shellcase LTD., “ShellOP”, 2 pages, downloaded from the Internet on Nov. 1, 2002 from http://www.shellcase.com/pages/products.asp.
Martin Russel A.
Merrill Richard B.
Flynn Nathan J.
Foveon, Inc.
Girard & Equitz LLP
Wilson Scott R.
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