Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1997-07-18
1998-07-07
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 30, 257192, 257329, H01L 2906
Patent
active
057773475
ABSTRACT:
The present invention provides a digital vertical multi-valued logic device including a substrate defining a horizontal plane and a vertical direction normal to the horizontal plane, a substantially vertical conductive gate structure disposed above the substrate, source and drain regions, a channel region positioned between the source and drain region and adjacent to the gate structure, the channel region including at least a first and second tunnel barrier forming a quantum well structure. The quantum well acts to incorporate an artificial bandstructure into the present invention modifying device performance. By introducing quantum wells into the device structure, quantum-mechanically defined drain voltage levels are introduced in the MOS transistors at which no current flows, creating stable intermediate logic levels.
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Hewlett--Packard Company
Kelley Nathan K.
Lee Denise A.
Saadat Mahshid D.
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