Vertical channel silicon carbide metal-oxide-semiconductor field

Details Vertical channel silicon carbide metal-oxide-semiconductor field Vertical channel silicon carbide metal-oxide-semiconductor field

1996-01-22

1997-09-30

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

257289, 257330, 257331, 257508, H01L 310312

Patent

active

056728891

ABSTRACT:
A MOSFET includes a first SiC semiconductor contact layer, a SiC semiconductor channel layer supported by the first SiC contact layer, and a second SiC semiconductor contact layer supported by the channel layer. The second contact and channel layers are patterned to form a plurality of gate region grooves therethrough. Each of the gate region grooves includes a base surface and side surfaces which are covered with groove oxide material. A plurality of metal gate layers are provided, each being supported in a respective one of the plurality of grooves. A plurality of deposited oxide layers are provided, each in a respective one of the grooves so as to be supported by a respective one of the plurality of metal gate layers. A first metal contact layer is applied to the surface of the first SiC contact layer, and a second metal contact layer is applied to a portion of the surface of the second SiC contact layer.

REFERENCES:
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patent: 5451797 (1995-09-01), Davis et al.
patent: 5473176 (1995-12-01), Kakumoto
UK Patent Application GB 2/22420 Blackstone et al. Published 11 Jan. 1984.
"Plasma Etching Methods for the Formation of Planarized Tungsten Plugs Used in Multilevel VLSI Metallizations" by RJ Saia, et al, Reprinted from Journal of the Electrochemical Society, vol. 135, No. 4, Apr. 1988, pp.936-940.
"Selective CVD Tungsten Via Plugs for Multilevel Metallization", by DM Brown et al, Reprinted from IEEE Electron Device Letters, vol. EDL-8, No. 2, Feb. 1987, pp. 55-57.
"Nitrogen-Implanted Sic Diodes Using High-Temperature Implantation", by Mario Ghezzo, et al, IEEE Electron Device Letters, vol. 13, No. 12, Dec. 1992.

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