Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...
Patent
1991-08-20
1993-07-20
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
In combination with or also constituting light responsive...
257184, 257436, 372 45, 372 99, 372102, H01L 29205, H01L 3100, H01S 319
Patent
active
052296270
ABSTRACT:
A VC-VSTEP has a pnpn structure, and comprises first and second mirror structures, and an intermediate structure provided between the first and second mirror structures. The intermediate structure comprises an active and light absorption layer of multi-quantum well layers, and is set to have a thickness which is n times of an oscillation wavelength in a medium, where n is an integer.
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K. Kasahara et al., "Double heterostructure optoelectronic switch as a dynamic memory with low--power consumption", Appl. Phys. Lett. 52(9), 29 Feb. 1988.
Ichiro Ogura et al., "Reconfigurable optical interconnection using a two-dimensional vertical to surface transmission electrophotonic device array", Appl. Phys. Lett. 57(6), 6 Aug. 1990.
T. Numai et al., "Surface-emitting laser operation in vertical-to-surface transmission electrophotonic devices with a vertical cavity", Appl. Phys. Lett 58(12), 25 Mar. 1991.
Y. Tashiro et al., "Vertical to surface transmission electrophotonic device with selectable output light channels", Appl. Phys. Lett 54(4), 23 Jan. 1989.
Jackson Jerome
NEC Corporation
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