Vertical cavity surface emitting semiconductor laser device

Details Vertical cavity surface emitting semiconductor laser device Vertical cavity surface emitting semiconductor laser device

2005-07-05

2005-07-05

Harvey, Minsun Oh (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S045013, C372S046012, C372S096000, C372S099000

Reexamination Certificate

active

06914925

ABSTRACT:
A vertical cavity surface emitting semiconductor laser (VCSEL) device has p-type and n-type DBRs sandwiching therebetween a resonant cavity including an active layer. Each the DBRs has a plurality of layer pairs each including a Alx1Ga1-x1As high-reflectivity layer and an Alx2Ga1-x2As low-reflectivity layer and an Alx3Ga1-x3As slope content layer interposed between each of the high-reflectivity layers and adjacent low-reflectivity layer. The slope content layers in the vicinity of the active layer has an Al content x3 wherein 0<x3≦0.3 and 0.55≦x3<1 and an impurity concentration of 3×1017cm−3or above.

REFERENCES:
patent: 5170407 (1992-12-01), Schubert et al.
patent: 5397739 (1995-03-01), Chalmers et al.
patent: 5530715 (1996-06-01), Shieh et al.
patent: 6014400 (2000-01-01), Kobayashi
patent: 6201825 (2001-03-01), Sakurai et al.

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