Vertical-cavity surface-emitting semiconductor laser

Details Vertical-cavity surface-emitting semiconductor laser Vertical-cavity surface-emitting semiconductor laser

2005-01-25

2005-01-25

Everhart, Caridad (Department: 2825)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

C438S031000, C438S039000

Reexamination Certificate

active

06846685

ABSTRACT:
A vertical-cavity surface-emitting semiconductor laser has a substrate, a lower DBR structure portion having a plurality of layers provided on the substrate, a semiconductor buried structure portion provided over the lower DBR structure portion having at least one layer with buried therein an active layer, and an upper DBR structure portion having a plurality of layers provided over the semiconductor buried structure portion including the active layer. The active layer, at least one layer arranged over the active layer and at least one layer arranged beneath the active layer constitute an optical resonator region and each of the layers constituting the optical resonator region has an effective refractive index higher than respective effective refractive indices of other layers in the upper and lower DBR structure portions and a refractive index of the at least one layer constituting the semiconductor buried structure portion.

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