Vertical-cavity surface-emitting semiconductor laser

Details Vertical-cavity surface-emitting semiconductor laser Vertical-cavity surface-emitting semiconductor laser

1995-02-23

1996-04-30

Davie, James W.

Coherent light generators

Particular resonant cavity

Distributed feedback

372 45, 372 46, 372 92, 372 99, H01S 319

Patent

active

055132022

ABSTRACT:
A vertical-cavity surface-emitting semiconductor laser includes: a p-type bottom mirror having an upper face; a p-type spacer layer covering over the entire upper face of the p-type bottom mirror; an active region including an active layer having a bottom face smaller than the upper face of the p-type bottom mirror, the active region being formed on the p-type spacer layer; an n-type spacer layer formed on the active region; and an n-type top mirror formed on the n-type spacer layer, wherein a sum d of optical path lengths of the p-type spacer layer, the active region and the n-type spacer layer in a perpendicular direction satisfies a relationship expressed by d=(1+n).cndot..lambda./2 (n: natural number) with respect to a wavelength .lambda. of light oscillated from the active region.

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R. S. Geels et al., "Low Threshold Planarized Vertical-Cavity Surface-Emitting Lasers," IEEE Photonics Technology Letters, vol. 2, No. 4, Apr., 1990.
T. Kawakami et al., "Low Threshold Current Low-Voltage Vertical-Cavity Surface-Emitting Lasers with Low-Al-Content P-type Mirrors Grown by MOCVD", IEEE Photonics Technology Letters, vol. 4, No. 12, Dec. 1992.

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