Coherent light generators – Particular active media – Semiconductor
Patent
1990-05-21
1991-11-26
Epps, Georgia
Coherent light generators
Particular active media
Semiconductor
372 46, 357 4, 357 17, H01S 319
Patent
active
050688685
ABSTRACT:
This invention is a semiconductor vertical cavity surface emitting laser comprising a lasing cavity with an active layer, a bottom (rear) mirror and a top (front) mirror, and a front and rear electrodes for applying excitation current in direction substantially parallel to the direction of optical propagation. In accordance with this invention the front mirror comprises a thin, semitransparent metal layer which also acts as the front electrode. The metal layer is upon a highly doped layer forming a non-alloyed ohmic contact. The metal is selected from Ag and Al and is deposited in thickness ranging from 5 to 55 nm. The VCSEL is a semiconductor device wherein the semiconductor material is a III-V or II-VI compound semiconductor. For a VCSEL with GaAs active layer, the light output from the front metal mirror/electrode side yields a high external differential quantum efficiency as high as 54 percent. This is the highest quantum efficiency obtained in VCSEL structures. Quantum efficiencies on the oder of 10 to 30 percent are typical for prior art VCSEL structures. The VCSEL is suitable for fabrication utilizing planar technology.
REFERENCES:
patent: 4943970 (1990-07-01), Bradley
patent: 4949351 (1990-08-01), Imanaka
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Zinkiewicz, et al., "High-power vertical-cavity surface emitting AlGaAs/GaAs diode lasers", Appl. Phys. Lett., vol. 54(20), May 15, 1989.
Iga, et al., "Recent Advances of Surface Emitting Semiconductor Lasers", Optoelectronics-Devices & Technologies, vol. 3, No. 2, pp. 131-142, Dec. 1988.
Deppe, et al., "AlGaAs-GaAs and AlGaAs-GaAs-InGaAs vertical cavity surface emitting lasers with Ag mirrors", J. Appl. Phys., vol. 66(11), Dec. 11, 1989.
Deppe Dennis G.
Feldman Leonard C.
Kopf Rose F.
Schubert Erdmann F.
Tu Li Wei
Alber Oleg E.
AT&T Bell Laboratories
Epps Georgia
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