Vertical cavity surface emitting laser with reduced turn-on jitt

Details Vertical cavity surface emitting laser with reduced turn-on jitt Vertical cavity surface emitting laser with reduced turn-on jitt

1996-03-12

1999-02-02

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 46, 372 96, H01S 319

Patent

active

058675167

ABSTRACT:
A VCSEL that laser comprises a first mirror layer, an active layer including a quantum well region and a diffusion enhancing region, and a second mirror layer. The first and second mirror layers are layers of doped semiconductor material having a first and a second conductivity mode, respectively. The active layer is a layer of semiconductor material adjacent the first mirror layer. The second mirror layer is adjacent the active layer, remote from the first mirror layer. The diffusion enhancing region is a region of the active layer in which the semiconductor material of the active layer is doped with an acceptor impurity to such a high concentration that holes induced in the quantum well region by the diffusion enhancing region predominate over electrons in the quantum well region by about one order of magnitude.

REFERENCES:
patent: 5659568 (1997-08-01), Wang et al.
patent: 5661742 (1997-08-01), Huang et al.
patent: 5670789 (1997-09-01), Iwata
Nichols, D. T. et al., "Optical Transmission Systems Employing Vertical Cavity Surface Emitting Lasers and Monolithically Integrated Photoreceivers", Applied Physics Letters, vol. 65, No. 24, Dec. 12, 1994, pp. 3054-3056.
Valle, A. et al., "Spatial Hole Burning Effects on the Dynamics of Vertical Cavity Surface Emitting Laser Diodes", IEEE Journal of Quantum Electronics, vol. 31, No. 8 Aug. 1995, New York, pp. 1423-1431.
Adalberto Sapia et al., "Pattern Effects in Time Jitter of Semiconductor Lasers", Applied Physics Letters, vol. 61, No. 15, Oct. 12, 1992, pp. 1748-1750.

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