Vertical-cavity surface-emitting laser with non-epitaxial multil

Details Vertical-cavity surface-emitting laser with non-epitaxial multil Vertical-cavity surface-emitting laser with non-epitaxial multil

1990-12-19

1991-11-05

Epps, Georgia

Coherent light generators

Particular active media

Semiconductor

372 46, 372 49, 372 99, H01S 319

Patent

active

050635697

ABSTRACT:
A vertical-cavity surface-emitting semiconductive laser has non-epitaxial multilayered dielectric reflectors located on both its top and its bottom surfaces, in order to facilitate fabrication of the reflectors and achieve high optical cavity gain and low electrical power dissipation.

REFERENCES:
patent: 4752934 (1988-06-01), Fukuzawa et al.
patent: 4949350 (1990-08-01), Jewell et al.
Sakagushi, T. et al., "TiO.sub.2 (or Si)/SiO.sub.2 Dielectric Multilayer Reflector for Surface Emitting Lasers", Proc. of MRS Int'l. Mtg on Advanced Materials, vol. 10, Multilayers, May 31-Jun. 1, 1988.

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