Vertical cavity surface emitting laser with low band gap highly

Coherent light generators – Particular active media – Semiconductor

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H01S 319

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058188614

ABSTRACT:
A contact structure for a vertical cavity surface emitting laser is described. The contact structure comprises a surface metal contact, a degeneratively doped layer of low bandgap material less than 200 .ANG. thick, and a plurality of current spreading layers. The contact structure provides a low ohmic path between the metal contact and the active region of the vertical cavity surface emitting laser.

REFERENCES:
patent: 5596595 (1997-01-01), Tan et al.
Cleo '96, Summaries of papers presented at the Conference on Lasers and Electro-Optics, Jun. 2-7, 1996, Anaheim, CA, vol. 9, 1996 Technical Digest Series, Conference Edition, p. 208.

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