Vertical cavity surface emitting laser with doped active region

Coherent light generators – Particular resonant cavity – Distributed feedback

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372 45, 372 43, 372 28, 257184, 257201, H01S 308, H01S 3085

Patent

active

060613807

ABSTRACT:
VCSEL for high speed operation and method of fabrication including a substrate element, a first stack of distributed Bragg reflectors disposed on a surface of the substrate element, an active region lattice matched to a surface of the first stack of distributed Bragg reflectors, and a second stack of distributed Bragg reflectors lattice matched to a surface of the active region. The active region includes a plurality of quantum well layers, or structures, and a plurality of doped barrier layers. The doping of the barrier layers allows for a faster recombination time of the carriers prior to any occurrence of lateral carrier diffusion. This faster recombination time of the carriers prevents turn-off tails when the VCSEL device is switched off.

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patent: 5519721 (1996-05-01), Takano
patent: 5557626 (1996-09-01), Grodzinski et al.
patent: 5574738 (1996-11-01), Morgan
patent: 5737353 (1998-04-01), Sasaki

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