Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2008-03-18
2008-03-18
Nguyen, Dung (Michael) T. (Department: 2828)
Coherent light generators
Particular active media
Semiconductor
C372S043010
Reexamination Certificate
active
11554473
ABSTRACT:
A VCSEL with nearly planar intracavity contact. A bottom DBR mirror is formed on a substrate. A first conduction layer region is formed on the bottom DBR mirror. An active layer, including quantum wells, is on the first conduction layer region. A trench is formed into the active layer region. The trench is formed in a wagon wheel configuration with spokes providing mechanical support for the active layer region. The trench is etched approximately to the first conduction layer region. Proton implants are provided in the wagon wheel and configured to render the spokes of the wagon wheel insulating. A nearly planar electrical contact is formed as an intracavity contact for connecting the bottom of the active region to a power supply. The nearly planar electrical contact is formed in and about the trench.
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Biard James Robert
Johnson Ralph H.
Penner R. Scott
Finisar Corporation
Nguyen Dung (Michael) T.
Workman Nydegger
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