Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2008-03-18
2008-03-18
Nguyen, Dung (Michael) T. (Department: 2828)
Coherent light generators
Particular active media
Semiconductor
C372S043010
Reexamination Certificate
active
07346090
ABSTRACT:
A VCSEL with nearly planar intracavity contact. A bottom DBR mirror is formed on a substrate. A first conduction layer region is formed on the bottom DBR mirror. An active layer, including quantum wells, is on the first conduction layer region. A trench is formed into the active layer region. The trench is formed in a wagon wheel configuration with spokes providing mechanical support for the active layer region. The trench is etched approximately to the first conduction layer region. Proton implants are provided in the wagon wheel and configured to render the spokes of the wagon wheel insulating. A nearly planar electrical contact is formed as an intracavity contact for connecting the bottom of the active region to a power supply. The nearly planar electrical contact is formed in and about the trench.
REFERENCES:
patent: 6064683 (2000-05-01), Johnson
patent: 6411638 (2002-06-01), Johnson et al.
patent: 2004/0066820 (2004-04-01), Johnson et al.
patent: 2005/0031011 (2005-02-01), Biard et al.
U.S. Appl. No. 10/931,194, filed Aug. 31, 2004, Johnson et al.
U.S. Appl. No. 09/217,223, filed Dec. 12, 1988, Liu et al.
U.S. Appl. No. 10/026,016, filed Dec. 20, 2001, Johnson.
U.S. Appl. No. 10/026,019, filed Dec. 20, 2001, Johnson.
U.S. Appl. No. 10,026,044, filed Dec. 27, 2001, Johnson.
U.S. Appl. No. 10/026,020, filed Dec. 27, 2001, Johnson.
Prakash, S.R., et al., Proceedings of SPIE, SPIE-The International Society for Optical Engineering, Vertical-Cavity Surface-Emitting Lasers VII, “Reliability of 1.3 micron VCSELs for Metro Area Networks”, Jan. 29-30, 2003, San Jose, California, USA, vol. 4994, pp. 44-54.
Johnson, Ralph, et al., Proceedings of SPIE, SPIE-The International Society for Optical Engineering, Vertical-Cavity Surface-Emitting Lasers VII, “Long wavelength VCSELs at Honeywell” Jan. 29-30, 2003, San Jose, California, USA, vol. 4994, pp. 222-234.
Guenter, James K., et al., Proceedings of SPIE, SPIE-The International Society for Optical Engineering, Vertical-Cavity Surface-Emitting Lasers IX, “A plot twist: the continuing story of VCSELs at AOC”, Jan. 25-27, 2005, San Jose, California, USA, vol. 5737, pp. 20-34.
Kisker, D.W., et al., Proceedings of SPIE, SPIE-The International Society for Optical Engineering, Vertical-Cavity Surface-Emitting Lasers VIII, “1.3 um VCSEL production issues”, Jan. 28-29, 2004, San Jose, California, USA vol. 5364, pp. 146-157.
Volz, Kerstin, et al., Journal of Crystal Growth 251 (2003) 360-366, “The role of Sb in the MBE growth of (GaIn) (NAsSb)”, 2002 Elsevier Science B.V., www.sciencedirect.com.
Biard James Robert
Johnson Ralph H.
Penner R. Scott
Finisar Corporation
Nguyen Dung (Michael) T.
Workman Nydegger
LandOfFree
Vertical cavity surface emitting laser including trench and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Vertical cavity surface emitting laser including trench and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Vertical cavity surface emitting laser including trench and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2815840