Coherent light generators – Particular active media – Semiconductor
Patent
1997-11-04
2000-02-01
Davie, James W.
Coherent light generators
Particular active media
Semiconductor
372 96, H01S 3085
Patent
active
060211474
ABSTRACT:
A VCSEL for high power single mode operation and method of fabrication including a substrate element, a first stack of distributed Bragg reflectors disposed on a surface of the substrate element, an active region lattice matched to a surface of the first stack of distributed Bragg reflectors, and a second stack of distributed Bragg reflectors lattice matched to a surface of the active region. The VCSEL structure includes an isolation layer formed on the second stack of distributed Bragg reflectors. The isolation layer is formed of a dielectric material or insulating semiconductor material having an index of refraction greater than the first and second stacks of distributed Bragg reflectors and thereby defining an anti-guiding VCSEL structure. An electrical contact is coupled to a surface of the second stack of distributed Bragg reflectors and an electrical contact is positioned a surface of the substrate element.
REFERENCES:
patent: 5038356 (1991-08-01), Botez et al.
patent: 5661076 (1997-08-01), Yoo et al.
Mayer et al, Electronic Materials Science: For Integrated Circuits in SI and GAAS, New York: Macmillan Publishing Company, p. inside back cover. (no month available), 1990.
Huang Rong-Ting
Jiang Wenbin
Lebby Michael S.
Davie James W.
Koch William E.
Motorola Inc.
Parsons Eugene A.
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