Vertical-cavity surface-emitting laser diode (VCSEL), method...

Details Vertical-cavity surface-emitting laser diode (VCSEL), method... Vertical-cavity surface-emitting laser diode (VCSEL), method...

2011-04-12

2011-04-12

Harvey, Minsun (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S045010, C372S046013, C372S050110

Reexamination Certificate

active

07924899

ABSTRACT:
Provided is a VCSEL that includes a lower DBR of a first conductivity type, an active region, and an upper DBR of a second conductivity type, on a substrate. The lower DBR has a first to-be-oxidized Al-containing layer located farther from the active region than a second to-be-oxidized layer that is formed in the upper DBR. Both layers have an oxidized region and a first or a second non-oxidized region surrounded by the oxidized region. The first non-oxidized region is larger than the maximum size of the second non-oxidized region for a single mode oscillation, and smaller than the maximum size of the first non-oxidized region for a single mode oscillation. The second non-oxidized region is larger than the maximum size of the second non-oxidized region for a single mode oscillation. The first non-oxidized region has a size equal to or larger than that of the second non-oxidized region.

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