Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2011-04-12
2011-04-12
Harvey, Minsun (Department: 2828)
Coherent light generators
Particular active media
Semiconductor
C372S045010, C372S046013, C372S050110
Reexamination Certificate
active
07924899
ABSTRACT:
Provided is a VCSEL that includes a lower DBR of a first conductivity type, an active region, and an upper DBR of a second conductivity type, on a substrate. The lower DBR has a first to-be-oxidized Al-containing layer located farther from the active region than a second to-be-oxidized layer that is formed in the upper DBR. Both layers have an oxidized region and a first or a second non-oxidized region surrounded by the oxidized region. The first non-oxidized region is larger than the maximum size of the second non-oxidized region for a single mode oscillation, and smaller than the maximum size of the first non-oxidized region for a single mode oscillation. The second non-oxidized region is larger than the maximum size of the second non-oxidized region for a single mode oscillation. The first non-oxidized region has a size equal to or larger than that of the second non-oxidized region.
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Fildes & Outland, P.C.
Fuji 'Xerox Co., Ltd.
Harvey Minsun
Niu Xnning
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