Vertical cavity surface emitting laser diode operable in 1.3 .mu

Details Vertical cavity surface emitting laser diode operable in 1.3 .mu Vertical cavity surface emitting laser diode operable in 1.3 .mu

1999-03-02

2000-04-11

Bovernick, Rodney

Coherent light generators

Particular active media

Semiconductor

372 96, H01S 319

Patent

active

060495561

ABSTRACT:
A vertical cavity surface emitting laser diode includes an active layer of a group III-V compound semiconductor device containing N and As as the group V elements. The active layer has exposed lateral edges wherein the N atoms are substituted by the As atoms at the exposed lateral edges by an annealing process conducted in a AsH.sub.3 atmosphere.

REFERENCES:
patent: 5561681 (1996-10-01), Nishimura
patent: 5912913 (1999-06-01), Kondow et al.
patent: 5943357 (1999-08-01), Lebby et al.
patent: 5956363 (1999-09-01), Lebby et al.
Miyashi, et al. "Growth parameters for metastable GaP1x-Nx alloys in MOVPE" (Inst. Phys. Conf. Ser. No. 141:2 (1994)) Sep., 1994, pp. 97-100.

Affiliated with

Also associated with

Rating

Vertical cavity surface emitting laser diode operable in 1.3 .mu does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Vertical cavity surface emitting laser diode operable in 1.3 .mu, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Vertical cavity surface emitting laser diode operable in 1.3 .mu will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1182149