Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Packaging or treatment of packaged semiconductor
Reexamination Certificate
2005-12-27
2005-12-27
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Packaging or treatment of packaged semiconductor
C438S029000, C438S032000, C438S038000, C438S047000, C438S508000, C438S508000, C257SE31099, C257SE31105, C257S083000, C362S084000, C362S612000, C362S800000, C372S098000, C372S103000, C250S21400C, C250S552000
Reexamination Certificate
active
06979582
ABSTRACT:
The present invention provides a vertical-cavity surface emitting laser (VCSEL) diode and a method for producing the same. In this method, an n-type and a p-type ohmic contact electrodes are previously disposed, and then two pairs of distributed Bragger reflectors (DBRs) are formed. At last, a permanent metal substrate is plated. According to the present invention, reflectivity of the DBRs can be preserved without damage during rapid thermal annealing, and thus brightness of the laser diode is improved.
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patent: 06097499 (1994-04-01), None
Horng Ray-Hua
Wu Dong-Sing
Baxley Charles E.
Fourson George
National Chung-Hsing University
Pham Thanh V.
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