Vertical cavity surface emitting laser diode and a method...

Details Vertical cavity surface emitting laser diode and a method... Vertical cavity surface emitting laser diode and a method...

2008-09-22

2010-10-12

Harvey, Minsun (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S046010, C372S050124

Reexamination Certificate

active

07813403

ABSTRACT:
A vertical cavity surface emitting laser diode (VCSEL) with a new structure is disclosed. The VCSEL of the invention provides the active layer, the first spacer layer, the tunnel junction, the second spacer layer burying the tunnel junction. Only the first spacer layer is ion-implanted to form a high-resistive region around the tunnel junction. The current injected into the second spacer layer is confined by the tunnel junction to reach the active layer, which reduces the increase of the parasitic resistance of the device. The high-resistive region around the tunnel junction reduces the parasitic capacitance of the device.

REFERENCES:
patent: 5513202 (1996-04-01), Kobayashi et al.
patent: 2009/0141766 (2009-06-01), Onishi
Lear et al., “High Power Conversion Efficiencies and Scaling Issues . . . Lasers”, IEEE Photonics Technology Letters, vol. 6, No. 7, Jul. 1994, pp. 778-781.

Affiliated with

Also associated with

Rating

Vertical cavity surface emitting laser diode and a method... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Vertical cavity surface emitting laser diode and a method..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Vertical cavity surface emitting laser diode and a method... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4222962