Vertical cavity surface emitting laser device and vertical...

Details Vertical cavity surface emitting laser device and vertical... Vertical cavity surface emitting laser device and vertical...

2011-03-15

2011-03-15

Harvey, Minsun (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S096000, C372S022000

Reexamination Certificate

active

07907653

ABSTRACT:
In the surface emitting laser, low threshold electric current and high-power output are achieved while maintaining single mode characteristics. The surface emitting laser comprises a layered structure formed on a GaAs substrate10is comprised of: a semiconductor lower DBR mirror12, a cladding layer14, a n-type contact layer16, an active layer18, an electric current constricting layer20, a p-type cladding layer22, a p-type contact layer24, a phase adjusting layer36and a dielectric upper DBR mirror28.The surface emitting laser should be formed such that the diameter X (μm) of the opening diameter of the previously mentioned electric current constricting layer20and diameter Y (μm) of the phase adjusting layer satisfy the following relation:X+1.9λ≦Y≦X+5.0λ (wherein λ indicates oscillation wavelength (μm) of the surface emitting laser).

REFERENCES:
patent: 5594751 (1997-01-01), Scott
patent: 6618414 (2003-09-01), Wasserbauer et al.
patent: 7256417 (2007-08-01), Mawst et al.
patent: 2003/0026303 (2003-02-01), Ouchi

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